Electron Beam Lithography Process Optimization: An Experimental Design Study - Linfei Gu,Rohan Handa
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Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semico ... Visas aprašymas
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Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semiconductor nanowires, Nanoscale Selective Area MOCVD (Metalorganic Chemical Vapor Deposition), or NS¿SAG, is a very attractive growth technique for the fabrication of sophisticated nanowire structure, because by using this technique, diameter and location of wires are controllable, with no incorporation of unwanted metals. It is achieved by deposition of a nanöopeningarray ¿patterned dielectric mask above the substrate. Since crystals cannot be formed on dielectric mask, nanowire growth only occurs at openings, with desired diameters and locations, as shown in Fig 1. Pattern of nano opening arrays is of vital importance since it governs the size, location and density of nanowires as wells as growth rate and behavior.
Daugiau informacijos
| Autorius | Linfei Gu, Rohan Handa |
|---|---|
| Leidėjas | GRIN Verlag |
| Išleidimo metai | 2011 |
| Viršelio tipas | Minkšti viršeliai |
| EAN | 9783656083160 |