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CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications -

Anglų
2016-10-14
167,73 € 258,05 €

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To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address rel ... Visas aprašymas

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Aprašymas

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

Daugiau informacijos

Leidėjas Cambridge University Press
Išleidimo metai 2016
Viršelio tipas Kieti viršeliai
EAN 9781605111285
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167,73 € 258,05 €